Title :
A novel high-frequency power FET structure fabricated using LPCVD WSi/sub 2/ gate and LCPVD W source contact technology
Author :
Shenai, K. ; Piacente, P.A. ; Saia, R. ; Hennessy, W. ; Korman, C.S. ; Baliga, B.J.
Author_Institution :
Gen. Electr. Co., Schenectady, NY, USA
Abstract :
A novel high-frequency power FET technology is reported that is based on the application of blanket-deposited LPCVD (low-pressure chemical vapor deposition) WSi/sub 2/ to reduce the gate sheet resistance and selectively deposited LPCVD W to improve the source and gate contact resistances. Power FETs capable of blocking 45 V and 90 V in the off-state have been fabricated using this technology, with unprecedented high-frequency performance and excellent wafer yield. These devices have the lowest specific-on-resistance-specific-input-capacitance product ever reported, with transient switching times of less than 7 ns and the capability of switching more than 500 A/cm/sup 2/. For the first time, power FETs with integral Schottky diodes are reported which have resulted in significant enhancement in the reverse recovery characteristics of the parasitic body p-n junction diode of a conventional power MOSFET.<>
Keywords :
MOS integrated circuits; chemical vapour deposition; insulated gate field effect transistors; integrated circuit technology; metallisation; power integrated circuits; power transistors; 45 V; 7 ns; 90 V; LCPVD W source contact; LPCVD WSi/sub 2/ gate; W-Si; WSi/sub 2/-Si; blocking voltages; high-frequency; integral Schottky diodes; low-pressure chemical vapor deposition; power FET structure; power IC; power MOSFET; reverse recovery characteristics; transient switching times; Capacitance; Contact resistance; FETs; Power dissipation; Power supplies; Schottky diodes; Silicides; Silicon; Switching converters; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32933
