Title :
Co-integration of silicon nanodevices and NEMS for advanced information processing
Author :
Mizuta, Hiroshi ; Nagami, Tasuku ; Ogi, Jun ; Pruvost, Benjamin ; Ramírez, Mario A G ; Yoshimura, Hideo ; Tsuchiya, Yoshishige ; Oda, Shunri
Author_Institution :
Sch. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK
Abstract :
In this paper we present our recent attempts at developing the advanced information processing devices by integrating nano-electro-mechanical (NEM) structures into conventional silicon nanodevices. Firstly, we show high-speed and nonvolatile NEM memory which features a mechanically-bistable floating gate is integrated onto MOSFETs. Secondly we discuss hybrid systems of single-electron transistors and NEM structures for exploring new switching principles.
Keywords :
MOSFET; elemental semiconductors; nanoelectromechanical devices; random-access storage; silicon; single electron transistors; MOSFET; NEMS; Si; advanced information processing; hybrid systems; mechanically-bistable floating gate; nanoelectromechanical structures; nonvolatile memory; silicon nanodevice co-integration; single-electron transistors; CMOS logic circuits; CMOS technology; Information processing; MOSFETs; Micromechanical devices; Nanoelectromechanical systems; Nanoelectronics; Nanoscale devices; Nonvolatile memory; Silicon;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4735070
