Title :
Two types of 500 V double gate lateral N-ch bipolar-mode MOSFETs in dielectrically isolated p/sup -/ and n/sup -/ silicon islands
Author :
Nakagawa, A. ; Yamaguchi, Y. ; Watanabe, K. ; Ogura, T.
Author_Institution :
Toshiba Res. & Dev. Center, Kawasaki, Japan
Abstract :
Two types of 500-V double-gate lateral N-ch bipolar-mode MOSFET (metal-oxide-semiconductor field effect transistor), fabricated on dielectrically isolated p/sup -/ and n/sup -/ silicon islands, were compared. It was found that electrical characteristics for devices on p/sup -/ silicon islands are superior to those of counterpart devices on n/sup -/ silicon islands. It was also shown that double gate operation improves the device tradeoff relation, realizing 200-ns fall time and 0.075- Omega cm/sup 2/ on-resistance-area product. The devices were passivated by SIPOS resistive field plates, which allow series connection by metal interconnection layers without breakdown voltage reduction.<>
Keywords :
insulated gate field effect transistors; power transistors; 200 ns; 500 V; MOSFETs; SIPOS resistive field plates; dielectrically isolated Si islands; double gate; electrical characteristics; fall time; field effect transistor; lateral N-ch bipolar-mode; metal interconnection layers; n/sup -/ type islands; p/sup -/ type islands; passivated devices; power transistors; series connection; Breakdown voltage; Dielectric breakdown; Dielectric devices; Dielectric substrates; Electric variables; Insulated gate bipolar transistors; MOSFETs; Semiconductor films; Silicon; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32936
