A smartphone SP10T T/R switch in 180-nm SOI CMOS with 8kV+ ESD protection by co-design

Author

Wang, X. Shawn ; Xin Wang ; Fei Lu ; Li Wang ; Rui Ma ; Zongyu Dong ; Li Sun ; Wang, Aiping ; Yue, C. Patrick ; Wang, Dongping ; Joseph, Alvin

Author_Institution

Dept. of ECE, Univ. of California, Santa Barbara, Santa Barbara, CA, USA

fYear

2013

fDate

22-25 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

This paper reports the first 8kV+ ESD-protected SP10T transmit/receive (T/R) antenna switch for quad-band (0.85/0.9/1.8/1.9-GHz) GSM and multiple W-CDMA smartphones fabricated in an 180-nm SOI CMOS. A novel physics-based switch-ESD co-design methodology is applied to ensure full-chip optimization for a SP10T test chip and its ESD protection circuit simultaneously.

Keywords

CMOS integrated circuits; cellular radio; code division multiple access; electrostatic discharge; receiving antennas; silicon-on-insulator; smart phones; transmitting antennas; ESD protection circuit; SOI CMOS; SP10T T/R antenna switch; SP10T test chip; SP10T transmit/receive antenna switch; W-CDMA smartphones; frequency 0.85 GHz; frequency 0.9 GHz; frequency 1.8 GHz; frequency 1.9 GHz; full-chip optimization; physics-based switch-ESD co-design methodology; quad-band GSM; size 180 nm; smartphone SP10T T/R switch; CMOS integrated circuits; Electrostatic discharges; GSM; Multiaccess communication; Switches; Switching circuits; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference (CICC), 2013 IEEE

Conference_Location

San Jose, CA

Type

conf

DOI

10.1109/CICC.2013.6658474

Filename

6658474