Prediction and verification of no gate orientation effects for GaAs MESFETS on

Author

Ueno, K. ; Hida, H. ; Ogawa, Y. ; Tsukada, Y. ; Nozaki, T.

Author_Institution

NEC Corp., Kawasaki, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

846

Lastpage

849

Abstract

Theoretical and experiment investigations based on crystallographic considerations were carried out to study the possibility of avoiding piezoelectric-charge-induced orientation effects. Piezoelectric-charge-induced threshold voltage (V/sub t/) variations for different crystal orientations were estimated by calculating piezoelectric potentials using the effective piezoelectric constant tensor for an arbitrarily oriented FET. Comparison between theoretical prediction and experimental results was made for WSi/sub x/-gate self-aligned GaAs MESFETs fabricated on

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; substrates; 0.5 micron; 300 ms; GaAs; MESFETS; SAG; WSi/sub x/; effective piezoelectric constant tensor; gate orientation effects elimination; piezoelectric potentials; piezoelectric-charge-induced orientation effects; self-aligned gate; threshold voltage variations; Dielectric substrates; FETs; Gallium arsenide; Laboratories; MESFETs; Microelectronics; National electric code; Piezoelectric effect; Tensile stress; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32943

Filename

32943