DocumentCode :
2156494
Title :
From 2D-planar to 3D-non-planar device architecture: A scalable path forward?
Author :
Shahidi, Ghavam G.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
2013
fDate :
22-25 Sept. 2013
Firstpage :
1
Lastpage :
8
Abstract :
The microelectronics industry is in the process of transitioning from 2D-planar devices to 3D-non-planar (FinFET). In this paper, a metric is developed to assess the impact of scaling and device performance on chip (circuit) power as it is migrated node-to-node. The impact of node migration is assessed at product level as it is moved from 32 nm (2D-planar) to 22 nm (3D-non-planar device). Some of the limitations of the existing 22 nm 3D-device is reviewed that may explain some of the short comings in the product performance. Going forward it is critical that in two areas the FinFET needs to be improved: Multi-VT implementation and move away from the tapered fin shape.
Keywords :
MOSFET; scaling circuits; 2D-planar device architecture; 3D-nonplanar device architecture; FinFET; chip circuit power; microelectronics industry; multiVT implementation; node migration; scalable path forward; scaling; CMOS integrated circuits; Doping; FinFETs; Logic gates; Performance evaluation; Resource description framework;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2013 IEEE
Conference_Location :
San Jose, CA
Type :
conf
DOI :
10.1109/CICC.2013.6658477
Filename :
6658477
Link To Document :
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