Foundations for scaling beyond 14nm

The path to extending Moore´s Law beyond 14nm technology node will require a combination of advanced imaging, computation, patterning and design methods. Use of phase shift masks in combination with inverse lithography methods can enable imaging of complex, tight pitch patterns. Customizing designs to have asymmetric minimum metal pitch design rules can improve overall density. Pitch division methods like pitch quartering permit scaling beyond physical imaging limits from a single exposure. For example, metal test structures at 24nm pitch are generated using spacer based pitch quartering. Co-optimizing design and process allow application of pitch division to logic devices. Pitch division and Computation Lithography methods can be combined with EUV (Extreme Ultraviolet) lithography to further enhance scaling and design rule flexibility.