A fully functional 1 K ECL RAM on a bounded SOI wafer

Author

Ueno, K. ; Arimoto, Y. ; Odani, N. ; Ozeki, M. ; Imaoka, K.

Author_Institution

Fujitsu Ltd., Kawasaki, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

870

Lastpage

872

Abstract

A fully functional 1 K ECL RAM (emitter-coupled logic random-access memory) with a Schottky-clamped cell has been fabricated on a bounded silicon-on-insulator (SOI) wafer. The complete isolation made possible by both the SOI technique and the trench structure has made it possible to reduce the number of soft errors induced by alpha -particles. The cell was completely isolated by using U-grooves deep enough to reach the thick oxide layer (1 mu m). The SOI RAM´s performance was improved by reducing the parasitic capacitance. It is shown that the rate of soft-error occurrence for the SOI RAM is three-hundred times smaller than that for the conventional RAM.<>

Keywords

bipolar integrated circuits; emitter-coupled logic; integrated memory circuits; random-access storage; 1 kbit; ECL RAM; Schottky-clamped cell; Si; U-grooves; alpha -particles; bipolar IC; bounded SOI wafer; emitter-coupled logic; fully functional memory chip; isolation; random-access memory; soft errors reduction; trench structure; Circuits; Delay effects; Power dissipation; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32947

Filename

32947