48 GHz AlInAs/GaInAs heterojunction bipolar transistors

Author

Mishra, U.K. ; Jensen, J.F. ; Rensch, D.B. ; Brown, A.S. ; Pierce, M.W. ; McCray, L.G. ; Kargodorian, T.V. ; Hoefer, W.S. ; Kastris, R.E.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

873

Lastpage

875

Abstract

The authors report on the DC and RF performance of self-aligned Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As heterojunction bipolar transistors (HBTs). The properties that make the AlInAs/GaInAs material system extremely attractive for HBTs are discussed The epitaxial layer structure was grown by molecular beam epitaxy on semi-insulating InP. The device structure is shown in cross section. A large variety of HBT devices with different emitter sizes and with different numbers of emitter fingers have been fabricated. The common emitter characteristics of a single 5- mu m*5 mu m emitter are reported.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; solid-state microwave devices; 48 GHz; 5 micron; Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As; EHF; HBT; III-V semiconductors; MM-wave operation; RF performance; common emitter characteristics; epitaxial layer structure; heterojunction bipolar transistors; microwave devices; millimetre wave type; molecular beam epitaxy; self-aligned devices; semiinsulating InP; Artificial intelligence; Current density; Electron mobility; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Photonic band gap; Radio frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32948

Filename

32948