A hot electron InP/InGaAs heterostructure bipolar transistor with f/sub T/ of 110 GHz

Author

Chen, Y.K. ; Nottenburg, R.N. ; Panish, M.B. ; Hamm, R.A. ; Humphrey, D.A.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

876

Lastpage

877

Abstract

Self-aligned hot electron InP/InGaAs HBTs with cutoff frequency f/sub T/=110 GHz and f/sub max/=58 GHz have been realized. Preliminary ring oscillators have also been implemented with a propagation delay of 50 ps and 4-mW power consumption per stage. The layer structure was grown lattice-matched to Fe-doped semi-insulating InP substrates by gas-source molecular beam epitaxy. The typical room temperature common-emitter current-voltage characteristics for a current gain of 50 are shown. An f/sub T/ greater than 100 GHz is achieved over a broad collector bias range.<>

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; hot electron transistors; indium compounds; molecular beam epitaxial growth; solid-state microwave devices; 4 mW; 50 ps; 58 to 110 GHz; EHF; Fe-doped semi-insulating InP substrates; InP-InGaAs; InP:Fe; MM-wave type; common-emitter current-voltage characteristics; gas-source molecular beam epitaxy; heterostructure bipolar transistor; hot electron; lattice matched layer structure; microwave devices; power consumption per stage; propagation delay; ring oscillators; self aligned device; Bipolar transistors; Cutoff frequency; Electrons; Energy consumption; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Propagation delay; Ring oscillators; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32949

Filename

32949