DocumentCode :
2156583
Title :
Electric Field Dependence of Modulation in Multilayer InAs Quantum Dot Waveguides
Author :
Akca, Imran B. ; Dana, Aykutlu ; Aydinli, Atilla ; Rossetti, Marco ; Li, Lianhe ; Fiore, Andrea ; Dagli, N.
Author_Institution :
Bilkent Univ., Ankara
fYear :
2007
fDate :
17-22 June 2007
Firstpage :
1
Lastpage :
1
Abstract :
The low voltage modulation in InAs quantum dot waveguides is observed in this paper. We have measured the electro-optic coefficient in multilayer quantum dot structures far away from resonance and obtained an enhancement compared to bulk GaAs. Electro-absorption measurement results suggest that these waveguides are good candidates for use in electro-absorption modulators such as Mach-Zehnder devices.
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; electro-optical modulation; electroabsorption; indium compounds; optical multilayers; optical waveguides; semiconductor quantum dots; InAs; Mach-Zehnder devices; electric field dependence; electro-absorption measurement; electro-absorption modulators; electro-optic coefficient measurement; low voltage modulation; multilayer InAs quantum dot waveguides; multilayer quantum dot structure; Absorption; Gallium arsenide; Materials science and technology; Nanotechnology; Nonhomogeneous media; Physics; Quantum dots; Resonance; Tunable circuits and devices; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
Type :
conf
DOI :
10.1109/CLEOE-IQEC.2007.4386216
Filename :
4386216
Link To Document :
بازگشت