A very small active-matrix LCD panel with monolithically integrated peripheral driver circuits

Author

Emoto, F. ; Senda, K. ; Fujii, E. ; Nakamura, A. ; Yamamoto, A. ; Uemoto, Y. ; Kamimura, T. ; Kano, G.

Author_Institution

Matsushita Electr. Corp., Osaka, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

878

Lastpage

880

Abstract

The authors demonstrate a very small active-matrix LCD (liquid crystal display) panel, 21 mm*25 mm, having driver circuits on a single quartz substrate. In order to increase the channel mobility of the TFT, a novel technology for solid-phase growth of the polysilicon film on the quartz substrate was developed. The typical subthreshold characteristics of the fabricated p- and n-channel TFTs in the polysilicon film are reported. An LCD panel containing the peripheral driver circuits and the active matrix has been successfully fabricated by the conventional CMOS process. The output signal waveforms of the fabricated horizontal shift register are shown.<>

Keywords

CMOS integrated circuits; driver circuits; liquid crystal displays; thin film transistors; 21 mm; 25 mm; CMOS process; LCD panel; Si-SiO/sub 2/; TFT; active-matrix; channel mobility improvement; horizontal shift register; liquid crystal display; monolithically integrated drivers; peripheral driver circuits; polysilicon film; quartz substrate; solid-phase growth; subthreshold characteristics; thin film transistor; Active matrix liquid crystal displays; Active matrix technology; CMOS process; CMOS technology; Driver circuits; Integrated circuit technology; Liquid crystal displays; Shift registers; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32950

Filename

32950