Title :
Microwave frequency detector based on MEMS technology
Author :
Zhang, Jun ; Liao, Yongchang ; Yongchang Jiao
Author_Institution :
Key Lab. of MEMS of Minist. of Educ., Southeast Univ., Nanjing, China
Abstract :
This paper presents the design, fabrication, and measurement of a MEMS microwave frequency detector for the first time. The structure integrated on GaAs substrate using MMIC process consists of a microwave power divider, a microwave power combiner, two CPW transmission lines, a MEMS capacitor power sensor and a thermopile. The detector has been designed and fabricated in X band successfully. The sensitivity is 2.86 GHz pF-1 from 19 dBm to 23 dBm by the capacitor, and 0.031 GHz ¿V-1 from 10 dBm to 20 dBm by the thermopile, respectively.
Keywords :
III-V semiconductors; MMIC; coplanar waveguides; gallium arsenide; micromechanical devices; microwave detectors; power combiners; power dividers; thermopiles; CPW transmission lines; GaAs; MEMS capacitor power sensor; MEMS technology; MMIC process; X band; microwave frequency detector; microwave power combiner; microwave power divider; thermopile; Detectors; Fabrication; Frequency measurement; Gallium arsenide; Micromechanical devices; Microwave frequencies; Microwave measurements; Microwave technology; Time measurement; Transmission line measurements;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4735084
