Title :
A power sensor with 80ns response time for power management in microprocessors
Author :
Bhagavatula, Srikar ; Byunghoo Jung
Author_Institution :
Electr. & Comput. Eng., Purdue Univ., West Lafayette, CA, USA
Abstract :
A real-time, on-chip power sensor that estimates load currents and on-chip temperatures concurrently is presented. It occupies an area of 0.01mm2 in 0.13μm CMOS technology. With a simplified 1-point calibration and a response time of 80ns, it shows improvements in input dynamic range by 10×, response time by 6× and sensitivity by 3× over previous such sensors. A current reference with a measured temperature coefficient 91ppm/°C (-20°C to 120°C) is presented. This reference is used for online calibration of the power sensor to enable greater tolerance to PVT variations and aging effects.
Keywords :
CMOS integrated circuits; calibration; microprocessor chips; temperature sensors; 1-point calibration; CMOS technology; PVT variations; aging effects; input dynamic range; load currents; microprocessors; on-chip temperatures; online calibration; power management; real-time on-chip power sensor; response time; size 0.13 mum; temperature -20 C to 120 C; temperature coefficient; time 80 ns; Calibration; Current measurement; Dynamic range; System-on-chip; Temperature measurement; Temperature sensors; Time factors;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2013 IEEE
Conference_Location :
San Jose, CA
DOI :
10.1109/CICC.2013.6658487
