Title :
Realization of pseudomorphic and superlattice bipolar resonant tunneling transistors
Author :
Seabaugh, A.C. ; Reed, M.A. ; Frensley, W.R. ; Randall, J.N. ; Matyi, J.R.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A resonant transistor was fabricated in which electrical contact is made directly to the quantum well of a double-barrier resonant tunneling structure. The quantum well is doped p-type, and electrical connection is achieved by ion implantation. On either side of the double-barrier structure, the emitter and collector contact layers are n-type with bandgap wider than the quantum-well bandgap. Two functioning embodiments of this device, referred to as the bipolar quantum resonant tunneling transistor (BiQuaRTT), have been realized. One is a superlattice and the other a pseudomorphic device. Room-temperature common-emitter transistor characteristics for the superlattice BiQuaRTT typically show current gain greater than 20. The pseudomorphic BiQuaRTT structure shows a current gain greater than 5.<>
Keywords :
heterojunction bipolar transistors; hot electron transistors; ion implantation; semiconductor quantum wells; semiconductor superlattices; tunnelling; HBT; bipolar quantum resonant tunneling transistor; common-emitter transistor characteristics; current gain; double-barrier structure; heterojunction bipolar transistors; hot electron theories; ion implantation; p-type doping; pseudomorphic device; quantum well; resonant tunneling transistors; superlattice devices; Bipolar transistors; Contacts; Gallium arsenide; Instruments; Laboratories; Resonant tunneling devices; Superlattices; Temperature; Transconductance; Voltage;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32958