Realization of pseudomorphic and superlattice bipolar resonant tunneling transistors

A resonant transistor was fabricated in which electrical contact is made directly to the quantum well of a double-barrier resonant tunneling structure. The quantum well is doped p-type, and electrical connection is achieved by ion implantation. On either side of the double-barrier structure, the emitter and collector contact layers are n-type with bandgap wider than the quantum-well bandgap. Two functioning embodiments of this device, referred to as the bipolar quantum resonant tunneling transistor (BiQuaRTT), have been realized. One is a superlattice and the other a pseudomorphic device. Room-temperature common-emitter transistor characteristics for the superlattice BiQuaRTT typically show current gain greater than 20. The pseudomorphic BiQuaRTT structure shows a current gain greater than 5.<>