Title :
Design of an E-band high power amplifier for wireless high data rate communications
Author :
Asadi, Shahrooz ; Yagoub, Mustapha C E
Author_Institution :
SITE, Ottawa Univ., Ottawa, ON
Abstract :
In this paper, a fully integrated E-band power amplifier with 17 dB gain, 11.5 dBm saturated output power, and 5 GHz bandwidth was achieved in the 90 nm CMOS technology. The amplifier configuration consists of two cascode stages and a common-source output stage. It exhibits a peak power added-efficiency of 20% while consuming 50 mW from a 1.5 V power supply.
Keywords :
CMOS integrated circuits; field effect MIMIC; integrated circuit design; low-power electronics; millimetre wave power amplifiers; nanoelectronics; CMOS technology; cascode amplifier configuration; common-source output stage; efficiency 20 percent; gain 17 dB; integrated E-band high-power amplifier design; power 50 mW; power consumption; size 90 nm; voltage 1.5 V; wireless high-data rate communications; CMOS technology; Circuit simulation; Current density; Frequency; High power amplifiers; Inductors; MOSFETs; Millimeter wave technology; Power amplifiers; Power generation; CMOS; E-band; Power amplifier;
Conference_Titel :
Electrical and Computer Engineering, 2009. CCECE '09. Canadian Conference on
Conference_Location :
St. John´s, NL
Print_ISBN :
978-1-4244-3509-8
Electronic_ISBN :
0840-7789
DOI :
10.1109/CCECE.2009.5090093
