Title :
Ka-band (35 GHz) 3-stage SiGe HBT low noise amplifier
Author :
Riemer, Paul J. ; Buhrow, Benjamin R. ; Coker, Jonathan D. ; Randall, Barbara A. ; Techentin, Robert W. ; Gilbert, Barry K. ; Daniel, Erik S.
Abstract :
We present design, simulation, and measurement of a Ka-band (35 GHz) low noise amplifier (LNA) fabricated in a 120 GHz ft/fmax SiGe BiCMOS technology (IBM 7HP). To our knowledge, this is the first demonstration of a Ka-band LNA in a SiGe technology, representing the first of a set of desired building blocks for integrating a Ka-band transmit and receive (T/R) module in a single chip environment. At 35 GHz, the 3-stage LNA exhibited 15.1 dB gain, -5.9 dBm output compression (P1dB), 9 dBm third order intercept (IP3), and 5.6 dB noise figure at 25.6 mW DC power. Peak gain and bandwidth of the LNA were found to be 19.0 dB and 10.7 GHz respectively at a center frequency of 31.3 GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; bipolar MMIC; integrated circuit design; low noise amplifiers; 10.7 GHz; 120 GHz; 15.1 dB; 19 dB; 25.6 mW; 3-stage HBT low noise amplifier; 31.3 GHz; 35 GHz; 5.6 dB; BiCMOS technology; Ka-band low noise amplifier; Ka-band transmit and receive module; SiGe; heterojunction bipolar transistor; Bandwidth; BiCMOS integrated circuits; Frequency; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Noise measurement; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1516846
