Title :
Quasi-3D method: Time-efficient TCAD and mixed-mode simulations on finFET technologies
Author :
Hellings, Geert ; Shih-Hung Chen ; Linten, D. ; Sholz, Mirko ; Groeseneken, Guido
Author_Institution :
imec, Leuven, Belgium
Abstract :
The Quasi-3D allows to drastically speed up TCAD and mixed-mode simulations of finFET technologies, by solving on well-chosen 2D finFET cross sections. The method accurately reproduces important transistor metrics requiring only 1/20th of the simulation time.
Keywords :
MOSFET; technology CAD (electronics); 2D finFET crosssection; finFET technology; mixed-mode simulation; quasi-3D method; time-efficient TCAD; transistor metrics; Electrostatic discharges; FinFETs; Integrated circuit modeling; Logic gates; Silicon; Solid modeling; Three-dimensional displays; 3D simulations; Mixed-Mode simulations; Modeling; TCAD; bulk finFET;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2013 IEEE
Conference_Location :
San Jose, CA
DOI :
10.1109/CICC.2013.6658493
