DocumentCode :
2156965
Title :
A very low power SiGe LNA for UWB application
Author :
Park, Y. ; Lee, C.-H. ; Cressler, J.D. ; Laskar, J. ; Joseph, A.
Author_Institution :
Georgia Electron. Design Center, Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2005
fDate :
12-17 June 2005
Abstract :
We demonstrate the design, implementation, and measurement of the lowest dc power consuming SiGe LNA for UWB applications. A resistive feedback, a device optimization, and an inductive peaking technique are incorporated to enhance the overall LNA performance in terms of noise, gain flatness, input/output matching, linearity, and dc power consumption over the entire UWB band from 3 to 10 GHz. The implemented LNA achieves the gain of 13dB, the NF of 3.3dB, and the IIP3 of -7.5dBm between 2GHz and 10GHz while consuming dc power of as low as 9.6mW. To the best of authors´ knowledge, this LNA exhibits the lowest dc power consumption ever published and the lowest NF over the entire bandwidth for UWB application in a commercial SiGe process.
Keywords :
Ge-Si alloys; low noise amplifiers; low-power electronics; microwave amplifiers; ultra wideband technology; 13 dB; 3 to 10 GHz; 3.3 dB; 9.6 mW; SiGe; UWB application; dc power consumption; device optimization; inductive peaking technique; low noise amplifier; noise figure; resistive feedback; shunt feedback; Bandwidth; Energy consumption; Germanium silicon alloys; Impedance matching; Linearity; Noise measurement; Output feedback; Performance gain; Power measurement; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN :
01490-645X
Print_ISBN :
0-7803-8845-3
Type :
conf
DOI :
10.1109/MWSYM.2005.1516847
Filename :
1516847
Link To Document :
بازگشت