DocumentCode :
2157214
Title :
Characterization of matching variability and low-frequency noise for mixed-signal technologies
Author :
Tuinhout, H.
Author_Institution :
NXP Semicond. Oper./Design Platforms, Eindhoven, Netherlands
fYear :
2013
fDate :
22-25 Sept. 2013
Firstpage :
1
Lastpage :
111
Abstract :
A “device characterization view” on parametric and noise variability - summarized definitions, orders of magnitude and some rules of thumb - microscopic device architecture fluctuations (“matching”) are the dominant parametric spread contribution (<;100 nm nodes) - many other “systematic” variability effects affect devices by “a few percent” - blindly adding all possible effects explodes design margins, but with a bit of common sense a lot of the panic can be avoided - a lot of the effects are captured (largely) in compact models but beware of the near- and sub-threshold regions - noise variability and RTN are the new trending topics... - the variability buzz is certainly not over (the worst is yet to come).
Keywords :
integrated circuit design; integrated circuit modelling; integrated circuit noise; mixed analogue-digital integrated circuits; random noise; RTN; compact models; device characterization view; explodes design margins; low-frequency noise; matching variability; microscopic device architecture fluctuations; mixed-signal technology; near-threshold region; noise variability; parametric spread contribution; parametric variability; random telegraph noise; sub-threshold region; Low-frequency noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2013 IEEE
Conference_Location :
San Jose, CA
Type :
conf
DOI :
10.1109/CICC.2013.6658503
Filename :
6658503
Link To Document :
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