DocumentCode
2157288
Title
A Push-Pull Power Amplifier Using Novel Impedance-Transforming Baluns
Author
Chongcheawchamnan, M. ; Ang, K.S. ; Wong, J N H ; Robertson, I.D.
Author_Institution
Microwave and Systems Research Group, School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford, Surrey, GU2 7XH, UK. eep3mc@ee.surrey.ac.uk
fYear
2000
fDate
Oct. 2000
Firstpage
1
Lastpage
4
Abstract
A novel impedance-transforming balun technique has been applied to the design of a push-pull GaAs FET power amplifier for the first time. By employing a multilayer structure which gives very tight coupling, the balun can transform from 50 ¿to the very low impedance required by power transistors. The power amplifier delivers 2.9 W with a 41% PAE at 1 dB gain compression, at a frequency of 1.8 GHz.
Keywords
Coupling circuits; Frequency; Impedance matching; Microstrip components; Microwave theory and techniques; Power amplifiers; Power transistors; Power transmission lines; Printed circuits; Resistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. 30th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.2000.338841
Filename
4139854
Link To Document