Title :
Future memory technologies
Author_Institution :
Semicond. Bus. Div., Samsung Electron. Co., Ltd., Yongin, South Korea
Abstract :
The presentation will discuss the future memory technologies beyond the 30 nm node, especially for DRAM, NAND Flash, new memories such as Phase change RAM (PRAM), and ferroelectric RAM (FRAM), and novel device structure technologies, which include how far we can extend so far successful conventional semiconductor memories. First of all, business demands and new applications of memories will be summarized. Then the key technical challenges of conventional semiconductor memories to overcome the scaling limitation, possible solutions and directions will be discussed in detail.
Keywords :
DRAM chips; ferroelectric storage; flash memories; phase change memories; semiconductor storage; DRAM; NAND flash; ferroelectric RAM; future memory technologies; phase change RAM; semiconductor memories; Capacitors; Costs; Ferroelectric films; Leakage current; Mobile computing; Nonvolatile memory; Phase change random access memory; Random access memory; Research and development; Semiconductor memory;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4735112
