DocumentCode
2157486
Title
Using innovation to drive Moore’s Law
Author
Bohr, Mark
Author_Institution
Intel Corp., Hillsboro, OR, USA
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
13
Lastpage
15
Abstract
MOSFET scaling has served our industry well for several decades by providing significant improvements in performance, density and power, but traditional MOSFET scaling has run into hard roadblocks. Interconnect and patterning technologies have also run into significant limitations when trying to follow traditional scaling methods. The past few years have seen the introduction of new materials and device structures in integrated circuits that have kept us on the path of Moore´s Law. These types of innovations will be increasingly important as we continue to scale.
Keywords
MOS integrated circuits; MOSFET; integrated circuit interconnections; monolithic integrated circuits; MOSFET scaling; Moore´s Law; integrated circuits; interconnect; patterning; Integrated circuit interconnections; Integrated circuit technology; MOSFET circuits; Microprocessors; Moore´s Law; Power MOSFET; Silicon; Technological innovation; Tensile strain; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4735115
Filename
4735115
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