• DocumentCode
    2157486
  • Title

    Using innovation to drive Moore’s Law

  • Author

    Bohr, Mark

  • Author_Institution
    Intel Corp., Hillsboro, OR, USA
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    13
  • Lastpage
    15
  • Abstract
    MOSFET scaling has served our industry well for several decades by providing significant improvements in performance, density and power, but traditional MOSFET scaling has run into hard roadblocks. Interconnect and patterning technologies have also run into significant limitations when trying to follow traditional scaling methods. The past few years have seen the introduction of new materials and device structures in integrated circuits that have kept us on the path of Moore´s Law. These types of innovations will be increasingly important as we continue to scale.
  • Keywords
    MOS integrated circuits; MOSFET; integrated circuit interconnections; monolithic integrated circuits; MOSFET scaling; Moore´s Law; integrated circuits; interconnect; patterning; Integrated circuit interconnections; Integrated circuit technology; MOSFET circuits; Microprocessors; Moore´s Law; Power MOSFET; Silicon; Technological innovation; Tensile strain; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4735115
  • Filename
    4735115