• DocumentCode
    2157489
  • Title

    Low power ARM® Cortex™-M0 CPU and SRAM using Deeply Depleted Channel (DDC) transistors with Vdd scaling and body bias

  • Author

    Agrawal, Vishal ; Kepler, N. ; Kidd, David ; Krishnan, Girish ; Leshner, Sam ; Bakishev, T. ; Zhao, Dongbin ; Ranade, P. ; Roy, Ranjit ; Wojko, M. ; Clark, Leon ; Rogenmoser, R. ; Hori, Muneo ; Ema, T. ; Moriwaki, S. ; Tsuruta, T. ; Yamada, Tomoaki ; Mita

  • Author_Institution
    SuVolta Inc., Los Gatos, CA, USA
  • fYear
    2013
  • fDate
    22-25 Sept. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    An SoC with ARM® Cortex™-M0 CPU cores and SRAMs is implemented in both 65nm baseline and Deeply Depleted Channel™ (DDC) technologies. DDC technology demonstrates more than 50% active and static power reduction for the CPU cores at matched 350 MHz speed via VDD scaling and body biasing. Alternatively DDC technology demonstrates 35% speed increase at matched power. The results hold across process corners and temperature with appropriate body bias selection. DDC technology also increases SRAM static noise margin (SNM) reduces 8Mb VDDmin by 150 mV reduces SRAM active leakage by 50% while maintaining Iread and reduces SRAM retention leakage by 5x.
  • Keywords
    SRAM chips; low-power electronics; microprocessor chips; system-on-chip; transistors; DDC transistor; SRAM; SoC; VDD scaling; active power reduction; body biasing; deeply depleted channel; frequency 350 MHz; low power ARM cortex-M0 CPU; retention leakage; static noise margin; static power reduction; voltage 150 mV; Central Processing Unit; Noise; Random access memory; Silicon; System-on-chip; Transistors; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference (CICC), 2013 IEEE
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • DOI
    10.1109/CICC.2013.6658514
  • Filename
    6658514