• DocumentCode
    2157506
  • Title

    Green transistor as a solution to the IC power crisis

  • Author

    Hu, Chenming

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    16
  • Lastpage
    20
  • Abstract
    IC power consumption is not only a package thermal issue but also a significant and fast growing part of the world electricity consumption. A new low voltage transistor could contribute greatly to the need for a new Vdd scaling scenario. Green transistor (gFET) is based on tunneling and provides Ion and Ioff far superior to MOSFET at 0.2V if suitable low-Eg material is introduced into IC manufacturing.
  • Keywords
    field effect integrated circuits; field effect transistors; low-power electronics; power consumption; tunnelling; IC power consumption; IC power crisis; green transistor; low-Eg material; tunneling; voltage transistor; CMOS technology; Capacitance; Electrons; Energy consumption; Integrated circuit interconnections; Integrated circuit technology; MOSFET circuits; Packaging; Power generation; Subthreshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4735116
  • Filename
    4735116
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2157506