DocumentCode
2157724
Title
Microscopic structure and generation mechanism of Eγ´ centers in buried oxide
Author
Kama, Shashi P. ; Pugh, Robert D. ; Brothers, Charles P. ; Shedd, Walter ; Singaraju, Babu B K
Author_Institution
Phillips Lab., Kirtland AFB, NM, USA
fYear
1997
fDate
6-9 Oct 1997
Firstpage
32
Lastpage
33
Abstract
It is shown on the basis of first-principles quantum mechanical calculations that the observed 420G hyperfine signal attributed to the Eγ´ center in amorphous SiO2 could result either from a negatively charged symmetric or from a positively charged asymmetric oxygen-deficient center (ODC). Energetic considerations slightly favor a positively charged ODC at preexisting asymmetric ≡Si-Si≡ sites as the local microscopic structure of Eγ´ center.
Keywords
buried layers; hyperfine interactions; noncrystalline defects; paramagnetic resonance; silicon compounds; silicon-on-insulator; 420G hyperfine signal; Eγ´ center; ESR; SOI BOX; SiO2; amorphous SiO2; buried oxide; first-principles quantum mechanical calculation; microscopic structure; negatively charged symmetric ODC; oxygen-deficient center; positively charged antisymmetric ODC; Atomic measurements; Bonding; Charge carrier processes; Electron traps; Microscopy; Paramagnetic materials; Paramagnetic resonance; Quantum mechanics; Signal generators; Space missions;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1997. Proceedings., 1997 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-3938-X
Type
conf
DOI
10.1109/SOI.1997.634918
Filename
634918
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