DocumentCode
2157731
Title
CMOS in the new millennium
Author
Ning, Tak H.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2000
fDate
2000
Firstpage
49
Lastpage
56
Abstract
The VLSI industry is accelerating towards the end of scaling (bulk) CMOS. Near its scaling limit, a CMOS transistor could have a channel length of about 25 nm, a switching speed about three times as fast as a device of 100-nm channel length, and an fT of about 250 GHz. However realization of this CMOS technology is far from certain due to the many technical difficulties that must be overcome. In the next few years, while the application of CMOS to RF will grow rapidly, performance of digital CMOS will saturate. While development towards 25-nm channel length will continue, CMOS development will also be focused on opportunities beyond scaling the bulk device
Keywords
CMOS integrated circuits; VLSI; integrated circuit technology; 25 nm; CMOS; RF circuits; VLSI industry; channel length; scaling limit; switching speed; Application software; CMOS technology; Integrated circuit technology; Lithography; MOSFETs; Research and development; Silicon; Switches; System performance; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000
Conference_Location
Orlando, FL
Print_ISBN
0-7803-5809-0
Type
conf
DOI
10.1109/CICC.2000.852616
Filename
852616
Link To Document