Title :
Large-signal PHEMT switch model, which accurately predicts harmonics and two-tone inter-modulation distortion
Author :
Wei, C.J. ; Klimashov, A. ; Zhu, Y. ; Lawrence, E. ; Tkachenko, G.
Abstract :
In this paper, we present a comprehensive large-signal PHEMT switch model and address critical switch modeling issues. Reciprocity, dispersion, leakages, and sub-pinchoff, and charge conservation all play important role in generating a realistic large-signal switch model. Device nonlinearities covering linear, saturation, sub-pinchoff and deep pinchoff regions are taken into account in the model. The model has been verified by comparing simulated dc characteristics, S-parameters and power harmonics performance of switch devices with measured results. The model also successfully predicts harmonics, two-tone IP3 and cross-modulation in various switch circuits.
Keywords :
S-parameters; field effect transistor switches; harmonic distortion; intermodulation distortion; power HEMT; semiconductor device models; S-parameters; charge conservation; deep pinchoff regions; device nonlinearities; harmonics distortion; large-signal PHEMT switch model; large-signal switch model; multigate-FET; power harmonics performance; switch circuits; two-tone inter-modulation distortion; Circuit simulation; Distributed power generation; Harmonic distortion; PHEMTs; Power measurement; Power system harmonics; Predictive models; Scattering parameters; Switches; Switching circuits;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1516880