A Verilog-based temperature-dependent BSIM4 model for RF power LDMOSFETs

Author

Marbell, Marvin N. ; Hwang, James C M

fYear

2005

fDate

12-17 June 2005

Abstract

A BSIM4 model was modified to include the dynamic self-heating effect for accurate prediction of large-signal behavior of RF power Si LDMOSFETs. The model captures the temperature dependence of transconductance, threshold voltage, drain resistance and breakdown voltage. The model is verified against measured large-signal behavior, including output power, efficiency and linearity, as a function of input power as well as source and load impedances. In addition, the model accurately predicts the variation of intermodulation distortion with quiescent drain current. The model is scaleable and has been verified on transistors of different gate widths. The model is implemented in the Verilog-A format, making it portable to many popular circuit simulators.

Keywords

elemental semiconductors; hardware description languages; power MOSFET; semiconductor device models; silicon; RF power LDMOSFET; Si; Verilog-based BSIM4 model; breakdown voltage; drain resistance; dynamic self-heating effect; intermodulation distortion; large-signal behavior; load impedances; temperature dependence; temperature-dependent BSIM4 model; threshold voltage; transconductance; Distortion measurement; Electrical resistance measurement; Hardware design languages; Impedance measurement; Power measurement; Predictive models; Radio frequency; Temperature dependence; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1516882

Filename

1516882