Title :
A Ka-band direct oscillation HBT VCO MMIC with a parallel negative resistor circuit
Author :
Choumei, Kenichiro ; Matsuzuka, Takayuki ; Suzuki, Satoshi ; Hamano, Satoshi ; Kawakami, Kenji ; Ogawa, Nobuyuki ; Komaru, Makio ; Matsuda, Yoshio
Abstract :
This paper describes a low phase noise Ka-band VCO MMIC employing InGaP/GaAs HBT processes. The VCO has the following two features: a novel circuit comprising negative resistors arranged in parallel that achieves a steep phase slope, and a tuning circuit with two resonators that offers a wide tuning range and steep phase slope. Measurement results of the developed VCO show a phase noise ranging from -111 to -114 dBc/Hz at an offset frequency of 1 MHz, and a tuning bandwidth above 1.1 GHz in a 38-39 GHz band.
Keywords :
III-V semiconductors; MMIC oscillators; bipolar integrated circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; phase noise; voltage-controlled oscillators; 1 MHz; 38 to 39 GHz; HBT VCO MMIC; InGaP-GaAs; Ka-band direct oscillation; MMIC oscillators; heterojunction bipolar transistor; millimeter wave bipolar transistor oscillators; negative resistance circuits; parallel negative resistor circuit; phase noise; steep phase slope; tuning circuit; voltage controlled oscillators; Circuit optimization; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Noise measurement; Phase measurement; Phase noise; Resistors; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1516885
