A bipolar >40-V driver in 45-nm SOI CMOS technology

Author

Ismail, Yousr ; Kim, Chang-Jin C. J. ; Yang, Chih-Kong Ken

Author_Institution

Univ. of California, Los Angeles, Los Angeles, CA, USA

fYear

2013

fDate

22-25 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

This paper presents a high-voltage driver in nanometer-scale, low-voltage SOI CMOS technology well beyond the voltage limits of standard devices. The drive level is near the voltage-tolerance limit of the body insulator. A novel, bidirectional, switched-capacitor output stage that combines both voltage-conversion and pulse-drive is introduced. The two-level driver is implemented in 45-nm SOI CMOS technology and uses only process-compliant devices. It achieves a maximum output drive of 44 V and occupies an area of 600 μm × 350 μm. The output drive resistance depends on the pumping frequency and is equal to 36 KΩ at a current consumption of 28 mA drawn from a 1.5-V supply.

Keywords

CMOS integrated circuits; capacitors; driver circuits; silicon-on-insulator; SOI CMOS technology; bidirectional capacitor; bipolar driver; high-voltage driver; pulse-drive; size 45 nm; switched-capacitor; voltage-conversion; voltage-tolerance limit; CMOS integrated circuits; CMOS technology; Capacitors; Charge pumps; Logic gates; Reliability; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference (CICC), 2013 IEEE

Conference_Location

San Jose, CA

Type

conf

DOI

10.1109/CICC.2013.6658533

Filename

6658533