DocumentCode :
2158344
Title :
Evaluation of defect-tolerance scheme in a 600 M-bit wafer-scale memory
Author :
Yamashita, Koichi ; Ikehara, Shohei ; Nagashima, Masashi ; Tatematsu, Takeo
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fYear :
1991
fDate :
29-31 Jan 1991
Firstpage :
12
Lastpage :
18
Abstract :
Describes a simulator using Monte Carlo simulation that has been used to evaluate the defect tolerance scheme in 600 M-bit wafer-scale DRAM having additional switching register network logic (SW-REG). To obtain functional wafers even if a memory core yield is as low as 5%, a bypass line for SW-REG and spare lines for common signals are prepared, and the number of sections that the memory is to be partitioned into is determined. One can obtain about 300 to 650 M bits on a 6-in wafer when the memory core yield is 5 to 70%. Although the wafer-scale memory has hundreds of common signal lines because of parallel access, one can have an area-efficient system with optimized additional circuits using the simulator
Keywords :
DRAM chips; Monte Carlo methods; VLSI; 600 Mbit; DRAM; Monte Carlo simulation; area-efficient system; bypass line; defect-tolerance scheme; memory core yield; parallel access; switching register network logic; wafer-scale memory; Circuit analysis; Circuit simulation; Databases; Graphics; Laboratories; Logic; Random access memory; Registers; Silicon; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wafer Scale Integration, 1991. Proceedings., [3rd] International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
0-8186-9126-3
Type :
conf
DOI :
10.1109/ICWSI.1991.151690
Filename :
151690
Link To Document :
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