DocumentCode :
2158461
Title :
Ultrafast Gain Recovery in Quantum Dot based Semiconductor Optical Amplifiers
Author :
Gomis, J. ; Dommers, S. ; Temnov, V.V. ; Woggon, U. ; Martinez-Pastor, J. ; Laemmlin, M. ; Bimberg, D.
Author_Institution :
Dortmund Univ., Dortmund
fYear :
2007
fDate :
17-22 June 2007
Firstpage :
1
Lastpage :
1
Abstract :
Summary form only given. The limiting factor in ultrahigh bit rate amplification is the ultrafast population recovery in the resonant level, which is mainly limited by carrier capture and relaxation processes in the QD. We use pump-probe measurements resonant to the QDs confined states energies (ground and excited state) to investigate the response to a four fs-pulse train of 1 THz repetition rate. A deep insight about the capture process implied is then obtained, and direct capture from the wetting layer is identified as the dominant mechanism in the high current regime.
Keywords :
gain measurement; high-speed optical techniques; laser beams; laser variables measurement; quantum dot lasers; semiconductor optical amplifiers; carrier capture process; carrier relaxation process; excited state; ground state; pump-probe measurements; quantum dot based semiconductor optical amplifiers; ultrafast gain recovery; ultrahigh bit rate amplification limitation; Broadband amplifiers; Delay; Gain measurement; Indium gallium arsenide; Optical amplifiers; Optical waveguides; Quantum dots; Resonance; Semiconductor optical amplifiers; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
Type :
conf
DOI :
10.1109/CLEOE-IQEC.2007.4386291
Filename :
4386291
Link To Document :
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