DocumentCode :
2158467
Title :
Hot-carrier degradation behavior in body-contacted SOI nMOSFETs
Author :
Yang, Ji-Woon ; Lee, Jong-Wook ; Lee, Won-Chang ; Oh, Min-Rok ; Koh, Yo-Hwan
Author_Institution :
Dept. of Adv. Devices, Hyundai Electron Ind. Co. Ltd., Kyoungki, South Korea
fYear :
1997
fDate :
6-9 Oct 1997
Firstpage :
38
Lastpage :
39
Abstract :
Hot-carrier degradation in body-contacted silicon-on-insulator (BC SOI) nMOSFETs has been investigated and compared to that in conventional partially-depleted SOI (PD SOI) and bulk nMOSFETs. As compared to PD SOI and bulk nMOSFETs, BC SOI nMOSFETs have a unique degradation-rate coefficient which increases with increasing stress voltage. This is due to the hole injection into gate oxide at the drain junction edge caused by parasitic BJT effect with increasing stress voltage. In this paper, we will present some experimental data and simulation results and discuss hot-carrier degradation mechanism in BC SOI nMOSFETs
Keywords :
MOSFET; hot carriers; impact ionisation; silicon-on-insulator; body-contacted SOI nMOSFET; degradation rate coefficient; drain junction edge; gate oxide; hole injection; hot carrier degradation; parasitic BJT effect; stress voltage; Breakdown voltage; Computer simulation; Degradation; Hot carrier effects; Hot carriers; Interface states; MOSFETs; Semiconductor films; Silicon; Stress measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
ISSN :
1078-621X
Print_ISBN :
0-7803-3938-X
Type :
conf
DOI :
10.1109/SOI.1997.634921
Filename :
634921
Link To Document :
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