Title :
MOS transistor modeling for RF integrated circuit design
Author_Institution :
CSEM SA, Neuchatel, Switzerland
Abstract :
The design of radio-frequency (RF) integrated circuits in deep-submicron CMOS processes requires accurate and scalable compact models of the MOS transistor that are valid in the GHz frequency range and even beyond. Unfortunately, the currently available compact models give inaccurate results if they are not modified adequately. This paper presents the basis of the modeling of the MOS transistor for circuit simulation at RF. A physical and scalable equivalent circuit that can easily be implemented as a Spice subcircuit is described. The small-signal, noise and large-signal operations are discussed and measurements made on a 0.25 μm CMOS process are presented that validate the RF MOS model up to 10 GHz
Keywords :
CMOS integrated circuits; MOSFET; SPICE; UHF field effect transistors; UHF integrated circuits; circuit simulation; equivalent circuits; field effect MMIC; integrated circuit design; integrated circuit modelling; integrated circuit noise; microwave field effect transistors; semiconductor device models; semiconductor device noise; 0.25 micron; 10 GHz; GHz frequency range; MOS transistor modeling; MOSFET model; RF integrated circuit design; RFIC design; Spice subcircuit; circuit simulation; deep-submicron CMOS processes; large-signal operation; noise operation; radio-frequency ICs; scalable compact models; scalable equivalent circuit; small-signal operation; CMOS integrated circuits; CMOS process; Circuit simulation; Equivalent circuits; Integrated circuit modeling; Integrated circuit synthesis; MOSFETs; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling;
Conference_Titel :
Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5809-0
DOI :
10.1109/CICC.2000.852646
