Title :
BSIMPD: a partial-depletion SOI MOSFET model for deep-submicron CMOS designs
Author :
Su, Pin ; Fung, Samuel K H ; Tang, Stephen ; Assaderaghi, Fariborz ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
BSIMPD, a physics-based SPICE model, is developed for bridging deep-submicron CMOS designs using partially-depleted SOI technologies. Formulated on top of the industry-standard bulk-MOSFET model BSIM3v3 for a sound base of scalability and robustness, BSIMPD captures SOI-specific dynamic behaviors with its built-in floating-body, self-heating and body-contact models. A parameter-extraction strategy is demonstrated, and the simulation efficiency is studied. The model has been tested extensively within IBM on state-of-the-art high speed SOI technologies. It has been implemented in many circuit simulators
Keywords :
MOSFET; circuit simulation; equivalent circuits; integrated circuit design; integrated circuit modelling; semiconductor device models; silicon-on-insulator; BSIMPD; SOI MOSFET model; body-contact model; circuit simulator implementation; deep-submicron CMOS design; floating-body model; parameter-extraction strategy; partial-depletion SOI MOSFET; physics-based SPICE model; self-heating model; simulation efficiency; CMOS technology; Circuit simulation; Integrated circuit modeling; Isolation technology; MOSFET circuits; Performance gain; Quantum capacitance; SPICE; Semiconductor device modeling; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5809-0
DOI :
10.1109/CICC.2000.852647
