DocumentCode
2158754
Title
A broadband 10 GHz track-and-hold in Si/SiGe HBT technology
Author
Jensen, Jonathan C. ; Larson, Lawrence E.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fYear
2000
fDate
2000
Firstpage
245
Lastpage
248
Abstract
This paper presents a track-and-hold amplifier for sub-sampling communications applications based on a diode bridge design with high-speed Schottky diodes. Implemented in a 45 GHz BiCMOS Si/SiGe process, this IC consumes approximately 550 mW and can accommodate input voltages up to 600 mV. It has an IIP3 of 25.7 dBm with an input bandwidth in excess of 10 GHz
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; bridge circuits; elemental semiconductors; sample and hold circuits; semiconductor materials; silicon; wideband amplifiers; 10 GHz; 45 GHz; 550 mW; BiCMOS; HBT technology; IIP3; broadband track-and-hold amplifier; diode bridge design; high-speed Schottky diodes; input bandwidth; input voltages; sub-sampling communications; Bandwidth; BiCMOS integrated circuits; Bridge circuits; Capacitors; Germanium silicon alloys; Heterojunction bipolar transistors; Sampling methods; Schottky diodes; Silicon germanium; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000
Conference_Location
Orlando, FL
Print_ISBN
0-7803-5809-0
Type
conf
DOI
10.1109/CICC.2000.852658
Filename
852658
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