Title :
Intermodulation Distortion Simulation with a New MOSFET Model
Author :
Parker, Anthony E. ; Qu, Guoli
Author_Institution :
Electronics Department, Macquarie University, Sydney 2109 Australia. Email: tonyp@ieee.org
Abstract :
The second-and third-order intermodulation products of MOSFET amplifiers are investigated with a new MOSFET model, which has been implemented in SPICE3f4. Simulations performed with the new model agree well with measurements.
Keywords :
Capacitance; Design for quality; Diodes; Equations; Intermodulation distortion; MESFETs; MOSFET circuits; Performance evaluation; Predictive models; Topology;
Conference_Titel :
Microwave Conference, 2000. 30th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.2000.338582
