DocumentCode
2158928
Title
Intermodulation Distortion Simulation with a New MOSFET Model
Author
Parker, Anthony E. ; Qu, Guoli
Author_Institution
Electronics Department, Macquarie University, Sydney 2109 Australia. Email: tonyp@ieee.org
fYear
2000
fDate
Oct. 2000
Firstpage
1
Lastpage
4
Abstract
The second-and third-order intermodulation products of MOSFET amplifiers are investigated with a new MOSFET model, which has been implemented in SPICE3f4. Simulations performed with the new model agree well with measurements.
Keywords
Capacitance; Design for quality; Diodes; Equations; Intermodulation distortion; MESFETs; MOSFET circuits; Performance evaluation; Predictive models; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. 30th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.2000.338582
Filename
4139917
Link To Document