Transport of hot photocarriers in heterojunction

Analysis of the passage of photoexcited electrons through a heterojunction (HJ) interface had been carried out. The behavior of nonequilibrium hot electrons was represented through the use of a discrete energy spectrum depending on photon energy. This spectrum is generated with the result that hot electrons lose energy by emitting sequentially optical phonons. A concentration of hot electrons on these energy levels is fixed and depends on electron lifetime and the photon generation. A space distribution of the electron impulse was taken to be isotropic. The calculated photocurrent spectra were compared with the experimental characteristics of p-Ge/n-GaAs HJ prepared by molecular-beam epitaxy technique.