Title :
A low dielectric film obtained by polymerization of Tetramethyldisiloxane using a Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD) process.
Author :
Vestiel, E. ; Vindevoghel, J. ; Glay, D. ; Jama, C. ; Dessaux, O. ; Goudmand, P. ; Miane, J.L.
Author_Institution :
IEMN UMR CNRS 8520, USTL -Cité Scientifique, Avenue Poincaré BP69,59652 Villeneuve d´´ Ascq Cedex. E-mail: vestiel@orchidee.iemn.univ-lillel.fr
Abstract :
Cold Remote Nitrogen Plasma (CRNP) process is used to synthesise dielectric f ilns from 1,1,3,3 TetraMethylDSiloxane (TMDS) with low permittivity. These films are deposited on Gallium Arsenide and Aluminum. Dielectric characterizations are realized at 1OGHz using two different methods to evaluate the relative dielectric constant (¿ ¿) and the losses (¿ ¿) of deposited films. Films with a thickness in the range of (1 - 75 m m) are quickly deposited with a deposition rate that could achieves 460 Å/s on Aluminum substrate. This simple process is quite promising for interconnects or antenna applications, because it provides ¿ ¿ value of 3.89 and ¿ ¿ value of 0.09 at 1OGHz.
Keywords :
Aluminum; Chemical vapor deposition; Dielectric constant; Dielectric films; Dielectric losses; Gallium arsenide; Nitrogen; Permittivity; Plasma chemistry; Polymer films;
Conference_Titel :
Microwave Conference, 2000. 30th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.2000.338594
