Title :
A 900-MHz T/R switch with a 0.8-dB insertion loss implemented in a 0.5-μm CMOS process
Author :
Huang, Feng-Jung ; O, Kenneth
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
A single-pole, double-throw transmit/receive switch for 3.0-V applications has been fabricated in a 0.5-μm CMOS process. The switch exhibits a 0.8-dB insertion loss and a 17-dBm P1dB. The low insertion loss is achieved by optimizing the transistor widths and bias voltages, and by minimizing the substrate resistances, while the high 1 dB compression point is achieved by DC biasing the input and output nodes
Keywords :
CMOS integrated circuits; UHF integrated circuits; circuit optimisation; field effect transistor switches; integrated circuit design; losses; radio equipment; switching circuits; 0.5 micron; 0.8 dB; 3 V; CMOS process; DC biasing; SPDT switch; T/R switch; bias voltages optimisation; double-throw switch; insertion loss; single-pole switch; substrate resistance minimisation; transistor widths optimisation; transmit/receive switch; Application specific integrated circuits; CMOS process; Coupling circuits; Insertion loss; MOSFETs; Radio frequency; Silicon; Switches; Switching circuits; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5809-0
DOI :
10.1109/CICC.2000.852680
