A 900-MHz T/R switch with a 0.8-dB insertion loss implemented in a 0.5-μm CMOS process

Author

Huang, Feng-Jung ; O, Kenneth

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

fYear

2000

fDate

2000

Firstpage

341

Lastpage

344

Abstract

A single-pole, double-throw transmit/receive switch for 3.0-V applications has been fabricated in a 0.5-μm CMOS process. The switch exhibits a 0.8-dB insertion loss and a 17-dBm P_1dB. The low insertion loss is achieved by optimizing the transistor widths and bias voltages, and by minimizing the substrate resistances, while the high 1 dB compression point is achieved by DC biasing the input and output nodes

Keywords

CMOS integrated circuits; UHF integrated circuits; circuit optimisation; field effect transistor switches; integrated circuit design; losses; radio equipment; switching circuits; 0.5 micron; 0.8 dB; 3 V; CMOS process; DC biasing; SPDT switch; T/R switch; bias voltages optimisation; double-throw switch; insertion loss; single-pole switch; substrate resistance minimisation; transistor widths optimisation; transmit/receive switch; Application specific integrated circuits; CMOS process; Coupling circuits; Insertion loss; MOSFETs; Radio frequency; Silicon; Switches; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000

Conference_Location

Orlando, FL

Print_ISBN

0-7803-5809-0

Type

conf

DOI

10.1109/CICC.2000.852680

Filename

852680