Title :
Low DC-power Ku-band RTD VCO based on an InP monolithic RTD/HBT technology
Author :
Choi, Sunkyu ; Jeong, Yongsik ; Yang, Kyounghoon
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
This paper presents a Ku-band voltage-controlled oscillator with extremely low power consumption based on an InP-based RTD/HBT technology. In order to reduce the power consumption, an InP-based RTD is used for microwave power generation, which shows the negative resistance characteristics at a low voltage. The VCO exhibits an oscillation frequency of 14.3 GHz at a bias current of 2.1 mA and a supply voltage of 0.34 V with the corresponding DC power of 0.71 mW in the VCO core. In addition, a low phase noise of -118 dBc/Hz at 1 MHz offset has been obtained from the fabricated MMIC VCO.
Keywords :
III-V semiconductors; MMIC oscillators; heterojunction bipolar transistors; indium compounds; integrated circuit noise; low-power electronics; phase noise; resonant tunnelling diodes; voltage-controlled oscillators; 0.34 V; 0.71 mW; 1.2 mA; 14.3 GHz; InP; Ku-band RTD voltage controlled oscillator; MMIC voltage controlled oscillator; heterojunction bipolar transistor; low DC-power voltage controlled oscillator; microwave power generation; monolithic RTD/HBT technology; monolithic microwave integrated circuit; negative resistance characteristics; oscillation frequency; phase noise; resonant tunneling diode; Diodes; Energy consumption; Frequency; Heterojunction bipolar transistors; Indium phosphide; MMICs; Phase noise; Varactors; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1516934
