DocumentCode :
2159328
Title :
The deposition and some properties of polycrystalline silicon deposited by thermal decomposition of monosilane in propylene and hydrogen addition
Author :
Erkov, V.G. ; Devyatova, S.F.
Author_Institution :
Inst. of Phys. Semicond., Acad. of Sci., Novosibirsk, Russia
fYear :
2002
fDate :
2002
Firstpage :
320
Lastpage :
323
Abstract :
It was established that monosilane pyrolysis processes with increasing temperature passed from surface to gas phase: the heterogeneous chain radical route predominating at 640°C took heterogeneous-homogeneous chain radical nature at 700°C. At the same time pyrolysis reaction order by propylene decreased from (-1.28±0.02) down to (-0.6±0.02). Propylene and hydrogen were shown to decrease the deposition rate of PS layers band to reduce the portion of monosilane (m) used for PS deposition. The effective activation energy of monosilane pyrolysis processes without and with propylene and hydrogen in gas mixture was determined and was equal to 171±10 kJ/mol, 301±10 kJ/mol, 247±10 kJ/mol respectively. it was established that monosilane pyrolysis processes with increasing temperature passed from surface to gas phase: heterogeneous chain radical route predominating at 640°C took heterogeneous-homogeneous chain radical nature at 700°C.
Keywords :
chemical vapour deposition; elemental semiconductors; pyrolysis; reaction kinetics; semiconductor growth; semiconductor thin films; silicon; 640 C; 700 C; CVD; Si; activation energy; deposition rate; effective activation energy; heterogeneous chain radical route; heterogeneous-homogeneous chain radical nature; hot-wall low pressure reactor; hydrogen addition; monosilane pyrolysis; polycrystalline silicon deposition; propylene; pyrolysis reaction order; Argon; Hydrogen; Inductors; Interference; Isothermal processes; Microscopy; Physics; Silicon; Temperature; Thermal decomposition;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Science and Technology, 2002. KORUS-2002. Proceedings. The 6th Russian-Korean International Symposium on
Print_ISBN :
0-7803-7427-4
Type :
conf
DOI :
10.1109/KORUS.2002.1028030
Filename :
1028030
Link To Document :
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