Title :
DC-to-135 GHz and 15-to-135 GHz SPDT traveling wave switches using FET-integrated CPW line structure
Author :
Tsai, Zuo-Min ; Yeh, Mei-Chao ; Lei, Ming-Fong ; Chang, Hong-Yeh ; Lin, Chin-Shen ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
High operation frequency SPST and SPDT switches based on commercial 0.15-μm GaAs pHEMT are developed. A novel integrated CPW line structure, which integrates the device, signal line and ground into the CPW line structure, is proposed. By using this structure, the limitation of the traveling wave switch caused by the parasitic inductance between the device to signal and ground in the conventional microstrip line designs can be removed. From the measurement results, high operation frequency of 135 GHz is achieved. The SPST switch achieves less then 5 dB insertion loss from DC to 135 GHz. The SPDT switch achieves less than 6 dB insertion loss from 15 GHz to 135 GHz. This switch has the highest operation frequency among the reported traveling wave switches.
Keywords :
III-V semiconductors; coplanar waveguides; gallium arsenide; high electron mobility transistors; microstrip lines; microwave switches; 0 to 135 GHz; 0.15 micron; FET-integrated CPW line structure; GaAs; SPDT traveling wave switches; SPST traveling wave switches; coplanar waveguide; microstrip line designs; pHEMT; parasitic inductance; single pole double throw; single pole single throw; Communication switching; Coplanar waveguides; Equivalent circuits; FETs; Frequency; Inductance; Insertion loss; PHEMTs; Power transmission lines; Switches;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1516945
