Title :
Management of process of plasma etching of silicon
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
The research of process of plasma etching of silicon in CF2Cl2/O2 plasma on the installation "Plasma-600" is carried out. The covering of quartz walls of the reactor by fluorine polymer results in increase of speed of etching. The increase, observed in experiment, of concentration of chemically active particles (CAP) testifies to decrease by 10 times the probability of destruction of CAP as a result of one collision with a surface of the reactor covered by fluorine polymer. The preliminary results of development and research of the characteristics of the gauge of the moment of the ending of etching of silicon are submitted.
Keywords :
elemental semiconductors; plasma chemistry; process control; silicon; sputter etching; Si; chemically active particles; emission spectra; etching speed; fluorine polymer covered walls; plasma etching process; plasma reactor; process control; process optimization; Etching; Inductors; Plasma applications; Plasma chemistry; Plasma diagnostics; Plasma materials processing; Plasma properties; Polymers; Silicon; Spectroscopy;
Conference_Titel :
Science and Technology, 2002. KORUS-2002. Proceedings. The 6th Russian-Korean International Symposium on
Print_ISBN :
0-7803-7427-4
DOI :
10.1109/KORUS.2002.1028047
