Title :
Polysilicon emitter technology
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
Abstract :
The current status of polysilicon emitter technology is reviewed. The advantages of polysilicon emitters in high speed VLSI processes, in particular their high gains and scalability, are highlighted. The physics and metallurgy of the polysilicon/silicon interface is described in detail, and a direct comparison is made with electrical results. It is demonstrated that the polysilicon can be epitaxially regrown to produce an extended single-crystal emitter
Keywords :
VLSI; bipolar integrated circuits; bipolar transistors; doping profiles; elemental semiconductors; epitaxial growth; integrated circuit technology; reviews; semiconductor growth; silicon; bipolar IC; epitaxial regrowth; extended single-crystal emitter; high speed VLSI processes; metallurgy; polycrystalline Si; polysilicon emitter technology; polysilicon/Si interface; scalability; Bipolar transistors; Computer science; Fabrication; Physics; Predictive models; Semiconductor process modeling; Silicon; Surface cleaning; Tunneling; Very large scale integration;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69466
