Application of a Hybrid Method to Model Active Microwave Components and Circuits

This paper presents an application of a global hybrid method to model transistors and highly integrated circuits [1-3]. This approach combines a 3D electromagnetic simulation to accurately characterize the component metallic structure and an analytical deembedding technique to determine the contributions of the active device. We will first apply this approach to predict classical transistor responses and then describe how this method can be employed to understand the physics implied in a complex system of interacting active elements.