A Wavelet Based Self-Adaptive Mesh for Semiconductor Devices Simulation

A MESFET is simulated using a non-uniform mesh generated by an interpolating wavelet scheme. The wavelet coefficient threshold controls the compression ratio of the number of unknowns. It is shown that a tread off can be found between good compression and acceptable error on the gate, drain and source current of the MESFET. A compression of 83% gives a relative error of 4% on the computed drain current. This is the first step toward a numerical technique that uses wavelets to solve the hydrodynamic equations that model sub-micrometer gate length transistor, used in high frequency microwave circuits.