DocumentCode :
2160029
Title :
A Wavelet Based Self-Adaptive Mesh for Semiconductor Devices Simulation
Author :
Goasguen, S. ; El-Ghazaly, S.M.
Author_Institution :
Telecommunications Research Center, Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-5706 USA
fYear :
2000
fDate :
Oct. 2000
Firstpage :
1
Lastpage :
4
Abstract :
A MESFET is simulated using a non-uniform mesh generated by an interpolating wavelet scheme. The wavelet coefficient threshold controls the compression ratio of the number of unknowns. It is shown that a tread off can be found between good compression and acceptable error on the gate, drain and source current of the MESFET. A compression of 83% gives a relative error of 4% on the computed drain current. This is the first step toward a numerical technique that uses wavelets to solve the hydrodynamic equations that model sub-micrometer gate length transistor, used in high frequency microwave circuits.
Keywords :
Equations; Frequency; Hydrodynamics; MESFETs; Mesh generation; Microwave circuits; Microwave theory and techniques; Microwave transistors; Semiconductor devices; Wavelet coefficients;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2000. 30th European
Conference_Location :
Paris, France
Type :
conf
DOI :
10.1109/EUMA.2000.338656
Filename :
4139963
Link To Document :
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