Title :
Small Signal Parameters Extraction for Silicon MOS Transistors
Author :
Bracale, A. ; Pasquet, D. ; Gautier, J.L. ; Ferlet, V. ; Fel, N. ; Pelloie, J.L.
Abstract :
We present in this paper a new extraction procedure for MOS transistors. We deal mainly with extrinsic parameters determination, straightforwardly obtained from S-parameters measurements at cold biases (Vds = OV). We apply our procedure to a MOSFET implemented on SOI substrate.
Keywords :
Equivalent circuits; FETs; MESFETs; MOSFET circuits; Microwave devices; Microwave technology; Parameter extraction; Roentgenium; Scattering parameters; Silicon;
Conference_Titel :
Microwave Conference, 2000. 30th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.2000.338657
