Title :
A model for SIMOX buried-oxide low-field conduction and trapping
Author :
Krska, Jee-Hoon Y. ; Yoon, Jung U. ; Chung, James E.
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
Intrinsic SIMOX buried oxide (BOX) low-field conduction and trapping, which is not due to defect-related “piping”, has been previously observed for E-fields <3 MV/cm2. However, fundamental understanding of this phenomenon is still lacking. This study presents a new SIMOX BOX low-field conduction and trapping model, which takes into account the specific role of the BOX microstructure, i.e. BOX silicon-richness and the presence of BOX silicon islands. This model explains the observed SIMOX BOX conduction and charge-trapping characteristics as well as the correlation between low-field and high-field BOX conduction
Keywords :
SIMOX; electron traps; high field effects; insulating thin films; semiconductor process modelling; space-charge-limited conduction; BOX silicon islands; SIMOX; Si:O; buried oxide; high-field BOX conduction; low-field BOX conduction; trapping model; Density measurement; Electron emission; Electron traps; Implants; Measurement standards; Microstructure; Shape measurement; Silicon; Stress; Voltage;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634927
