A model for SIMOX buried-oxide low-field conduction and trapping

Author

Krska, Jee-Hoon Y. ; Yoon, Jung U. ; Chung, James E.

Author_Institution

MIT, Cambridge, MA, USA

fYear

1997

fDate

6-9 Oct 1997

Firstpage

50

Lastpage

51

Abstract

Intrinsic SIMOX buried oxide (BOX) low-field conduction and trapping, which is not due to defect-related “piping”, has been previously observed for E-fields <3 MV/cm². However, fundamental understanding of this phenomenon is still lacking. This study presents a new SIMOX BOX low-field conduction and trapping model, which takes into account the specific role of the BOX microstructure, i.e. BOX silicon-richness and the presence of BOX silicon islands. This model explains the observed SIMOX BOX conduction and charge-trapping characteristics as well as the correlation between low-field and high-field BOX conduction

Keywords

SIMOX; electron traps; high field effects; insulating thin films; semiconductor process modelling; space-charge-limited conduction; BOX silicon islands; SIMOX; Si:O; buried oxide; high-field BOX conduction; low-field BOX conduction; trapping model; Density measurement; Electron emission; Electron traps; Implants; Measurement standards; Microstructure; Shape measurement; Silicon; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1997. Proceedings., 1997 IEEE International

Conference_Location

Fish Camp, CA

ISSN

1078-621X

Print_ISBN

0-7803-3938-X

Type

conf

DOI

10.1109/SOI.1997.634927

Filename

634927